Figure 1: Schematic illustrations of the junctions.

Schematic representations of the junctions of Au^TS-SC₁₀PTM^R/NR//GaO_x^cond/EGaIn and the corresponding energy level diagrams. The top-electrodes (a) are liquid metal GaO_x^cond/EGaIn (where EGaIn is the eutectic alloy of Ga and In, and GaO_x^cond is a 0.7-nm-thick self-limiting highly conductive oxide layer)^15,16,17. The bottom electrodes (b) are template-stripped Au surfaces (∼300-nm-thick, see fabrication methods in ref. 11 and Methods for details). The ΔE and δE_ME represent the molecular energy gap and zero-bias energy off-set between the LUMO (or SUMO) and the Fermi level of the electrodes, respectively. Red dots show the central C atoms of radical moieties. The distance (d) between two electrodes is about 2.1 nm.