Figure 3: Transport in multilayer ReS2 with polymer electrolyte gating.
From: Disorder engineering and conductivity dome in ReS2 with electrolyte gating
(a) Sheet conductivity G as a function of VPE for ReS2 flakes of different thicknesses. (b) Insulator–metal–insulator sequence for multilayer (10 nm) ReS2 flake. Dashed lines are pointing on the regions of VPE, where transitions are occurring. (c) Hall mobility for the easy axis of trilayer ReS2 (2.2 nm thick) as a function of temperature T for different carrier densities and VPE in the metallic state. Red markers correspond to fixed carrier density n2D=1.55 × 1013 cm−2; filled, VPE=0.9 V; empty, VPE=1.6 V. Black markers, fixed carrier density n2D=1.82 × 1013 cm−2; filled, VPE=1.6 V; empty, VPE=2.1 V. Error bars originate from the uncertainty in carrier density extraction from Hall effect and conductivity measurements.
