Figure 3: Cross-sectional EBIC average line profiles.

EBIC average line profiles of the devices with 50, 100, 200 and 400 nm-thick CdSe layers with the approximate location of the FTO/CdTexSe1−x interface marked by the dashed black line. Note that the roughness of the FTO layer and the electron beam excitation volume create some error in the exact location of the FTO/CdTexSe1−x interface.