Figure 2: Numerical simulation of potential distribution in TRAM and the schematic band diagram.
From: Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
Schematic illustration of band diagram, memory operation and simulated electrostatic potential at the states of Programme (a–c), Read in Programme state (d–f), Erase (g–i) and Read in Erase state (j–l). The dashed line arrows indicate the tunnelling direction of electrons and holes from drain into graphene. The solid line arrows indicate the spreading of electrons and holes at graphene after tunnelling.
