Figure 3: Tunnelling current through h-BN layer.
From: Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
(a) Tunnelling current characteristics between drain electrode and graphene floating gate for various h-BN thicknesses. (b–d) Schematics of electron tunnelling between electrode and floating gate at different h-BN thicknesses. A too-thin h-BN layer allows for charge tunnelling on both contacts, and no charges are stored in the graphene (b); a too-thick h-BN layer prohibits tunnelling current at all (d). An appropriate thickness of the h-BN layer is necessary to invoke the asymmetric potential drop so that charges can be stored in the graphene without appreciable leakage current (c).
