Figure 5: Memory performance of TRAM.
From: Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
(a) I–V curve of the TRAM with 7.5-nm thick h-BN. Channel length and channel width of the device are 4 and 2 μm, respectively. The arrows indicate the current sweeping direction. Memory window from 0 to 4 V is shown with blue colour. (b) The plot of off current (left panel) and on/off ratio (right panel) along with reading voltage (VR) normalized by memory window (VW). (c) Retention characteristics of TRAM with 7.5-nm thick h-BN after programme (Vds=−8 V) and erase (Vds= 8 V) for 5 s, Vreading=0.01 V. (d) Endurance characteristics of the TRAM. Programme and erase were carried out by −6 V and +6 V with a pulse width of 0.1 s and a reading voltage of 0.1 V.
