Figure 7: Stretchability of TRAM.
From: Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
(a–b) Optical images of TRAM on PI/PDMS stretchable substrate before and after stretching 20% along the length direction. Scale bars are 10 μm. The device is wrinkled or crumpled after transfer. The boundaries of MoS2, h-BN and graphene area are marked by white, blue and red colours, respectively. (c) I–V curve of the device on PI/PDMS before stretching (black curve) and after stretching at certain strains (coloured). (d) On-current (black) and off-current (red) with tensile strain at a given voltage of 1 V. Memory function disappears at 20% strain. A 10-nm thick h-BN layer was used for the tunnelling insulator in (a).
