Figure 2: Quantized conductance in the Andreev quantum point contact.
(a) Differential conductance, G, as a function of gate voltage Vg at zero bias (black line), at source-drain bias larger than the gap (red line), and at elevated temperature (green line). At zero bias and base temperature, the first conductance plateau is at 4e2/h, double the value at higher temperature or bias. (b) The differential conductance in a second, lithographically identical device at zero bias (black line), at source-drain bias larger than the gap (red line), and in a magnetic field applied perpendicular to the plane of the chip (blue line).
