Figure 1: BN-TMDC-BN heterostructure device. | Nature Communications

Figure 1: BN-TMDC-BN heterostructure device.

From: Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

Figure 1

(a) The sandwiched TMDC heterostructure. (b) The BN-TMDC-BN heterostructure for selective etching. The etching window is marked by arrows. (c,d) Optical (c) and schematic image (d) of a BN-TMDC-BN FE transistor device with a Hall bar configuration. Scale bar, 10 μm. (e,f) Two-terminal ISD−VSD characteristics of a representative MoS2 device at 300 K (e) and 2 K (f). Linear I–V behaviour is observed in both cases. (g) Four-terminal conductance in the WS2 device plotted as a function of the gate voltage at various temperatures. (h,i) FE mobilities and Hall mobilities of MoS2 (h) and WS2 (i) at Vg=60 V at various temperatures.

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