Figure 9: High-resolution transmission electron microscopy images of samples A and B.
From: Stretching magnetism with an electric field in a nitride semiconductor
Top row: high-angle annular dark-field/scanning transmission electron microscopy (HAADF/STEM), a contrast between GaN and 32-nm thick (Ga,Mn)N films on the top of the structures is detected with no indications of Mn aggregation. Bottom row: high-resolution transmission electron microscopy (HRTEM) images for both layers reveal their single phase nature.
