Figure 4: Fabrication of p–n heterojunctions composed of the p-type a-CFTBO MS.
From: A room-temperature magnetic semiconductor from a ferromagnetic metallic glass
(a) Schematic of p–n heterojunction structure of Au (10 nm)/p-type a-CFTBO (300 nm)/n-type Si (300 μm)/Au (10 nm). (b) Schematic of p–n–p structure of Au (10 nm)/p-type a-CFTBO (300 nm)/n-type Si (300 μm)/p-type a-CFTBO (300 nm)/Au (10 nm). The n-type single-crystal Si used in the heterojunctions is heavily doped with phosphorous and has a resistivity of order of 10−3 Ω cm. (c) Current–voltage curves of the p–n heterojunctions. The inset gives an enlargement of the part indicated by a rectangle in the current–voltage curves.
