Figure 5: Electric field control of ferromagnetism in the a-CFTBO MS.
From: A room-temperature magnetic semiconductor from a ferromagnetic metallic glass
(a) Schematic of the experimental set-up for applying gate voltage on the a-CFTBO thin film through a drop of ionic liquid. The thickness of an insulating HfO2 layer is about 2 nm. (b) Illustration of electrically induced decrease of carrier concentration at a positive gate voltage. (c) Illustration of electrically induced increase of carrier concentration at a negative gate voltage. (d) Variation of M–H curves with different gate voltages measured at 300 K. The thickness of the a-CFTBO MS is 50 nm. Left inset shows the plot of the normalized M/Ms(0) versus magnetic field measured at different gate voltages for the a-CFTBO MS with a thickness of 25 nm, Ms(0) denotes the saturation magnetization without any gate voltage. Right inset is an enlargement of the part indicated by a rectangle.
