Figure 3: Temperature and bias dependence of TI spin voltage. | Nature Communications

Figure 3: Temperature and bias dependence of TI spin voltage.

From: Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states

Figure 3

(a) Temperature dependence of the spin voltage at +/−2 mA bias current. (Inset: illustration of how ΔV=V(M)−V(−M) is determined. Error bars are determined based on variations from a 10-point moving average.) (b) Temperature dependence of the conductivity. (c) Bias current dependence of the ferromagnetic detector voltage for several samples and devices showing a general linear dependence (Sample 1: 10 nm Fe/Al2O3/20 nm Bi2Se3/Al2O3, Sample 2, 3: 10 nm Fe/Al2O3/10 nm Bi2Se3/Al2O3).

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