Figure 2: Microwave response changes by the modulation microwave for arbitrary initial states.
From: Adaptive microwave impedance memory effect in a ferromagnetic insulator
(a–d) Differences of the S21-parameter of the probing microwave (ΔS21,p) between the initial and modulated state as a function of modulation microwave frequency (fm; a: real part, b: imaginary part) and power (pm; c: real part, d: imaginary part), where subscripts p and m denote the probing and modulation microwaves, respectively. (e) Line-profiles at fm=1.0 GHz for the real (black) and imaginary (red) parts of the ΔS21,p. The error bars represent the s.d. of the averaged (20-times) data. (f) Calculated N-FMR frequencies from real (black; Re[ΔS21,p]) and imaginary (red; Im[ΔS21,p]) ΔS21,p line profiles as a function of fm. (g) Changes of the Re[ΔS21,p] as a function of fm for various fp (black: 0.1 GHz; red: 0.8 GHz; green: 1.0 GHz; blue: 1.2 GHz; cyan: 1.3 GHz). (h) Changes of the Re[ΔS21,p] as a function of modulation microwave power (pm) at fp=1.0 GHz and fm=1.0 GHz. The error bars represent the s.d. of the averaged (20-times) data.
