Figure 6: In- situ annealing of graphene monitored by NEXAFS spectroscopy.
From: Imaging local electronic corrugations and doped regions in graphene
(a) In situ heating of CVD-grown SLG on Cu, where A–D were acquired at 30, 150, 300, 450 °C, respectively. The C K-edge spectra were acquired under ultra high vacuum (UHV) and at a magic angle of incidence (54.7°). Spectra E was acquired after the sample was heated to 650 °C and cooled back to room temperature within the UHV chamber. The interlayer/adsorbate/functional group region has no resonaces after annealing to 150 °C. (b) Three angles A–C (85°, 54.7° and 25°) at room temperature and (c) at 150 °C, as measured at the C K-edge.
