Figure 4: Electrical properties for Pb1−xSb2x/3Se.
From: Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics
Hall carrier concentration-dependent Seebeck coefficient (a) at room temperature and temperature-dependent Hall mobility (b) for Pb1−xSb2x/3Se solid solution. Although the band structure of PbSe remains nearly immune to alloying with Sb2Se3, the resulting dislocation scattering reduces the mobility.
