Figure 4: Strain engineering of the electronic structures. | Nature Communications

Figure 4: Strain engineering of the electronic structures.

From: Infrared fingerprints of few-layer black phosphorus

Figure 4

(a) Schematic illustration of the two-point bending apparatus using a flexible polyethylene terephthalate (PET) substrate. (b) Schematic illustration of two in-layer hopping parameters ( and ) and one out-of-plane hopping parameter (t) in a bilayer BP. (c) Extinction spectra (1−T/T0) of a 6L BP sample under varying tensile strains, with strain applied along the AC (red) and ZZ (blue) directions. The spectra are vertically offset. Here, 0.92%x (0.92%y) indicates applying 0.92% strain along the AC (ZZ) direction. The incident light is polarized along the AC direction. The dashed lines trace the shift in the transition energies. (d) The E11 and E22 peak energies as a function of tensile strains, the strain direction is along the AC (red) and ZZ (blue) directions, respectively. The solid lines are linear fits to the data.

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