Figure 2: Effect of growth parameters.
(a) Nanocomposite growth diagram showing effect of growth temperature and %Ge on phase separation. Red circle denotes no observation of phase separation (Ge/InAlAs metastable alloy) and green circle denotes phase-separated growth (Ge/InAlAs nanocomposite). All samples were grown at 1 μm per hour. (b) Measured nanostructure spacings versus growth rate. Black dash curve is a power law fit. Insets show planar-view EDX Ge maps from 3.6% Ge samples grown at 1 μm per hour, 0.2 μm per hour, and 0.1 μm per hour growth rate. Scale bars are 30 nm and arrow direction is [
]. (c) EDX linescans of Al, Ge, In, and As across nanowires. (d) APT Ge concentration iso-contour transect for nanowires. Outermost iso-contour line (blue) represents 5% Ge and innermost iso-contour line (red) is 95% Ge for each nanowire. Scale bar, 10 nm.
