Figure 1: Fabrication scheme of Si sacrificial nanofluidic devices.

(a) Micrometre-thick Si microstructures fabricated on SiO2/Si substrates. (b) Planarized Si microstructures inlaid in a SiO2 film (planarization SiO2) after SiO2 deposition and wafer polishing. (c) Thin Si nanostructures fabricated on top of inlaid Si microstructures. (d) Capping of Si fluidic structures by SiO2. (e) Fluidic ports and venting nanoholes fabricated in capping SiO2. (f) Sealing venting nanoholes by depositing SiO2 while keeping fluidic ports open. Critical three-dimensional structures (embedded α-Si features, venting holes and vacant channels) in figures (c–f) are better illustrated with the top films layers intentionally set as semi-transparent (as indicated by arrows).