Figure 6: Transport characterization of franckeite.
From: Exfoliation of natural van der Waals heterostructures to a single unit cell thickness
(a) Gate voltage dependence of the current–voltage for bilayer franckeite device between −50 and 50 V (brown to violet), in 10 V increments at 300 K. Bottom-right inset: an optical image of the device, the scale bar corresponds to 10 μm. (b) Same as a for a five-layer franckeite device. (c) Current–voltage curves for the five-layer device between 300 and 100 K (yellow to black), in 50 K increments. (d) Conductance dependence on gate voltage (300 K) for the bilayer device. (e) Same as d for the five-layer device. (f) Temperature dependence of the zero-bias conductance for the bilayer (red) and five-layer (blue) device, solid lines are Arrhenius fits.
