Figure 4: Bandgap determination in 10 nm-thick BP using temperature-dependent measurements.
From: Efficient electrical control of thin-film black phosphorus bandgap
(a) The conductance of the 10 nm-thick BP film as a function of top gate bias (VTG) at different temperatures from 120 to 295 K. The curves at three different back gate biases are plotted (VBG=0, −15 and 15 V). The bandgap is measured through the temperature-dependent minimum conductivity at the charge-neutrality point. (b) Conductance measurement curves similar to those in a at two different back gate biases (VBG=−25 and 25 V). (c) Dash (solid) lines: the calculated bandgap tuning properties for BP films consisting of 17, 19 and 21 layers using the tight-binding (TB) model without (with) additional bandgap-dependent dielectric screening effect. Dark cyan dots: the measured bandgap tuning for a 10 nm-thick BP film (∼19 layers). The error bars show the s.d., which accounts for the uncertainty in determination of displacement field due to the minor shift of VTM at different temperatures.
