Figure 3: Interference patterns and supercurrent flow in gapped and non-gapped graphene monolayers.
From: Edge currents shunt the insulating bulk in gapped graphene
(a) Differential resistance as a function of carrier concentration n and applied current I for a Nb-MLG-Nb junction (5 μm wide and 0.4 μm long). The gap is induced by alignment with the bottom hBN crystal. (b) Same for encapsulated but nonaligned monolayer graphene (the junction is 3 μm wide and 0.35 μm long). (c) Interference patterns for gapped MLG at relatively high doping (top panel) and at the CNP. (d) Same for non-gapped graphene. (e,f) Corresponding spatial profiles of the supercurrent density (Js). They were calculated using experimental patterns such as shown in c,d. Note that graphene edges in e support fairly high supercurrent at the CNP, whereas there is no indication of any enhanced current density along edges for the non-gapped case in f.
