Figure 3: Protonic transistors transfer characteristics.

(a) Plot of I_ds as a function of V_ds for different V_gs (RH 75%). For device with PdH_x contacts shown in Figure 1. (b) Plot of channel proton density (n_H+) as function of V_gs. Points are n_H+ derived from I_ds–V_ds data (a) assuming a mobility of (4.9±0.5)×10⁻³ cm² V⁻¹ s⁻¹ from n⁰_H+=8.9×10¹⁷cm⁻³ at V_gs=0. Line is (C_g=gate capacitance per unit area, t=device thickness). From simulations C_g×area=1.79×10⁻¹⁴ F. (c,d) Schematics of protonic transistor channel charge carrier n_H+ modulation for negative (c) and positive (d) gate voltage.