Figure 4: Protonic Transistor Simulations.
(a–c) two-dimensional plots of device nH+ (log scale in cm−3) as a function of Vgs (Vds=0.3 V). (d) Simulated Ids data (lines) for small Vds corresponding to device data shown in Figure 3a (only −10, 0, 10 Vgs shown for clarity). This data was generated using n0H+=8.9×1017 cm−3 and a corresponding μsH+=5.5×10−3 cm2 V−1 s−1, which is close to the one estimated from the device. The experimental data (dashed line) is shifted to Ids=0 for Vds=0 to compensate for hysteresis.
