Figure 1: Multilayer MoS2-based lateral spin-valve device.
From: Electrical spin injection and detection in molybdenum disulfide multilayer channel
(a) Optical image of the device with the multilayer MoS2 flake on 100 nm SiO2/Si(n++) substrate, the E1, E2, E3 and E4 indicate the four Au/Co/MgO electrodes. (b,c) AFM measurement (in tapping mode) focused on the MoS2 channel between E1 and E2 electrodes. The thickness of MoS2 is determined by the Gaussian distribution of pixel height in the square region in b. (d) Schematics of the lateral spin-valve device. The multilayer MoS2 serves as a spin transport channel, and two Au/Co/MgO electrodes are used to inject spin (Vds) and measure the current (Ids). A back-gate voltage (Vg) between the substrate and one top contact is used to modulate the carrier density in the MoS2 channel.
