Figure 2: Transport characterization of MoS2 field-effect transistor.
From: Electrical spin injection and detection in molybdenum disulfide multilayer channel
(a) Current (Ids)–voltage (Vds) characteristics between the E1 and E2 electrodes, measured at 12 K with applying different back-gate voltages Vg. Inset: band diagram of the back-to-back diode structure of the MoS2 device with a two-terminal bias Vds. (b) Ids–Vds characteristics measured between different electrodes with a back-gate voltage Vg=+10 V at 12 K. Inset: schematics of connection between different electrodes. (c) The total resistance (R) between the two electrodes versus the channel distance (normalized by the width) with different Ids. (d) Vds dependence of the total resistance (E1–E2) and the extracted contact resistance RC and the MoS2 channel resistance RMS (E1–E2). Inset: The contribution of RMS in the total resistance as a function of Vds. (e)Transfer characteristic Ids–Vg between E1 and E2 electrodes, measured at 12 K with applying different Vds. (f) Extracted effective mobility μ versus Vg with different Vds.
