Figure 3: Back-gate voltage-dependent MR characterization of the device.
From: Electrical spin injection and detection in molybdenum disulfide multilayer channel
(a) Magneto-resistance response of the multilayer MoS2-based lateral spin-valve device measured at 12 K with Vg=+20 V and Vds=−0.1 V. (b) Back-gate voltage dependence of MR measured at 23 K with Vds=−0.1 V. The error bars have been calculated by taking account of the signal noise and the contribution of leakage current. (c) Back-gate voltage-dependent Schottky barrier height (Φb). The deviation from the linear response at low Vg (blue solid line) defines the flat band voltage (VF) and the real Φb of Co/MgO on MoS2. Insets: schematics of MoS2 band structure with different Vg. (d) Variation of the total resistance (R) as a function of Vg with different Vds at 23 K. The error bars in b have been calculated by taking account of the signal noise and the contribution of leakage current.
