Figure 4: Drain-source bias and temperature-dependent MR characterization of the device.
From: Electrical spin injection and detection in molybdenum disulfide multilayer channel
(a) Vds dependence of MR measured at 23 K with Vg=+20 V. (b) The total resistance (R) of the device versus Vds. The area with orange colour indicates the Vds range where the total resistance is dominated by the contact resistance. (c) Temperature dependence of MR measured with Vg=+20 V and Vds=−0.1 V. (d) Temperature dependence of the total resistance (R) with different Vds and the MoS2 channel mobility μ (Vg=+20 V, Vds=−1 V). The error bars in a,c have been calculated by taking account of the signal noise and the contribution of leakage current.
