Figure 6: Evidence of hopping transport in the contact region.
From: Electrical spin injection and detection in molybdenum disulfide multilayer channel
(a) Arrhenius plot of the temperature dependent conductance (symbols) at different Vds from Fig. 4d and the fitting results by different hopping models (grey and pink lines). Two hopping regimes are clearly separated by T* (vertical line). (b) Band diagram of the Schottky contact region of the MoS2 device. The device can be divided into three regions. The direct tunnelling region consists of the MgO tunnelling barrier (RMgO) and one part of Schottky contact (RSC1) taken as a whole. The second region is in the tail part of depletion layer where electrons transport in a hopping behaviour (RSC2). The third region is the region where electrons either transport in the MoS2 channel by a hopping behaviour or transport in the MoS2 conduction band (RMS), depending on the carrier density.
