Figure 2: In situ TEM voltage-controlled I–V sweep on a GeTe nanowire device.
From: Inverting polar domains via electrical pulsing in metallic germanium telluride
(a) I–V sweep on a device with 1.85 kΩ resistance, from 0 to 1.34 V when the device fails. (b,c) Snapshots from bright-field TEM Movie 1, recorded on the device during the d.c. voltage sweep. (b) From 0 to 1.34 V no changes in structure are observed. (c) At 1.34 V, 0.75 mA current passes through the device, melting and sublimating it. So, neither the field nor the high d.c. current and associated Joule heating, couple to the internal domain polarizations. (d) Liquid GeTe flows inside confined to the conformal AlxOy coating altering the contrast from (c). Scale bar; 200 nm.
