Figure 4: Current–voltage characteristics of gold–nonadiyne–silicon junctions.
From: Single-molecule electrical contacts on silicon electrodes under ambient conditions
(a) Current–voltage properties of single-nonadiyne junctions of the form Au–nonadiyne–SiHD (red curves) and Au–nonadiyne–SiLD (green curves). The solid lines are the average of all the plotted curves (35 curves for both SiHD and SiLD). In the absence of a molecule (see b), the coefficient of variation (CV) increases eightfold for the low-doped silicon (SiLD) case and sixfold for the high-doped silicon, SiHD (Supplementary Table 1). (b) Current–voltage characteristics of an Au–gap–SiHD junction (35 curves). The bias sweep starts and ends at −0.8 V for all I(V) curves collected (Supplementary Fig. 4) (c) Energy band diagrams representations of the Au–nonadiyne–Si junction under charge carriers’ accumulation conditions (applied negative sample voltages) in the Si electrode (left panel) and under depletion conditions (applied positive sample voltage) for the SiHD (central panel) and SiLD (right panel). Changing the starting bias does not affect the shape of the IV curves (Supplementary Fig. 5). The initial set point used is 1 nA. The computed bandgap energy of 1,8-nonadiyne is 8.07 eV (Supplementary Fig. 12).
