Figure 1: Fabrication and characterization of scalable quantum confinement arrays.
From: Large-scale quantum-emitter arrays in atomically thin semiconductors
(a) SEM image of nanopillar substrate, fabricated by electron beam lithography. Black scale bar, 2 μm. (b) Illustration of the fabrication method: (1) mechanical exfoliation of LM on PDMS and all-dry viscoelastic deposition on patterned substrate; and (2) deposited LM on patterned substrate. (c, top) An AFM scan of 1L-WSe2 on a nanopillar. (bottom) The AFM height profile of a bare nanopillar (blue-shaded region) and of the flake deposited over it (pink line), measured along the dashed pink line cut in the top panel. Colour-scale bar represents height in nm and white scale bar 1 μm. (d) Dark field optical microscopy image (real colour) of 1L-WSe2 on nanopillar substrate (130 nm high, 4 μm separation). The full image corresponds to a 170 μm by 210 μm area. The green box highlights six adjacent nanopillars within the 1L-WSe2 region, measured in Fig. 2. The blue circles indicate two pierced nanopillars, and the pink circles indicate two non-pierced nanopillars. PDMS, polydimethylsiloxane; SEM, scanning electron microscope.
