Figure 3: Stress-field injection of charged domain walls near the Curie temperature.
From: Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite
(a) Schematic quadrant domain structure after probe-applied stress at elevated temperature. Spatially resolved current map of an injected long conducting boundary, (b), and the distribution of conducting and insulating boundaries surrounding the point where stress is applied, (c). A bias of magnitude −12 Vdc is applied to the bottom electrode. Differences in measured current values between panels (b,c) are due to wear of the conductive tip-coating rather than differences in the intrinsic transport properties of the boundary. The scale bars in (b,c) measure 10 μm. (d) Polarized light microscopy of the quadrant domain microstructure that develops around the point where probe-pressure is applied. (e) Schematic illustration of domain structure in d with in-plane domain polarizations indicated. Insulating head-to-head charged 90° walls are indicated with blue lines and conducting tail-to-tail 90° charged walls are indicated with red lines. Uncharged boundaries are indicated with black lines. The scale bar measures 100 μm.
