Figure 2: Tunnelling electroresistance of Pt/BaTiO3 (BTO)/Nb:SrTiO3 (NbSTO) ferroelectric tunnel junctions with various BTO thickness. | Nature Communications

Figure 2: Tunnelling electroresistance of Pt/BaTiO3 (BTO)/Nb:SrTiO3 (NbSTO) ferroelectric tunnel junctions with various BTO thickness.

From: Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Figure 2

Band diagram of separated Pt, BTO and NbSTO (a) and of Pt/BTO/NbSTO junction with a thick (for example, 16 u.c.) (b) and a thin (for example, 4 u.c.) BTO barrier (c), where ΦPt=5.65 eV is the work function of Pt, χBTO=3.9 eV the electron affinity of BTO, χNbSTO=4.08 eV the electron affinity of NbSTO, EVac the vacuum level, EC, EV and EF the conduction band minimum, the valence band maximum and the Fermi level of NbSTO, respectively, d the BTO thickness, Wd the depletion region width. (d,e) I–V curves of Pt/BTO/NbSTO (Nb: 0.7 wt%) FTJs, with a BTO thickness of 4, 8 and 16 u.c., in the ON and the OFF states, respectively. (f) Junction currents and corresponding ON/OFF ratios, read at 0.6 V, as a function of BTO thickness.

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