Figure 1: Schematic switching of an MTJ by VCIC.
From: Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions
(a,b) The core structure of an MTJ consists of a fixed FM layer and a free FM layer separated by a tunnel barrier. The MTJ can be set to a low (high)-resistance state with FM (AFM) coupling by applying a positive (negative) voltage pulse under zero magnetic field. (c,d) The FM (AFM) coupled state can be revealed by the positive (negative) shift of the minor TMR loop, measured with the bottom FM kept pointing down while changing the spin orientation of the top FM by sweeping an external magnetic field. The two resistance values at zero magnetic field are marked by red dots, which correspond to the two states in the upper panels.
