Figure 6: Diagrams of the electronic structures when the magnetization direction is different. | Nature Communications

Figure 6: Diagrams of the electronic structures when the magnetization direction is different.

From: Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

Figure 6

(a,b) Schematic three adjoining (001) planes of GaMnAs: the upper As (AsI), middle Ga (or Mn) and lower As (AsII) planes when the magnetization M direction is along the [110] (a) and [10] (b) directions. The ellipses schematically represent the wave functions of the impurity states α (yellow) and β (purple) originating from Mn A and B, respectively. The arrows represent the spin magnetic moments of Mn A and B. (c,d) Schematic energy-level diagrams when M is along the [110] (c) and [10] (d) directions. In each graph, the left-most (right-most) lines correspond to the 3d level (red) of Mn A (B) and its neighbouring As 4p level (blue). The yellow and purple lines represent α and β, respectively. The wavefunction overlap between α and β induces the bonding (green line) and antibonding (orange line) states with energy separation Δ. The black lines represent the localized states around Mn A and B formed by the hybridization between the 3d and 4p orbitals. The wave functions of these states overlap slightly, inducing the antibonding and bonding states with small energy separation (grey lines). (e) Schematic DOS around the top of the valence band (VB) in GaMnAs. The pink solid and dotted curves represent the DOS of the impurity band (IB) when M is along [110] and [10], respectively. The blue solid curve represents the DOS of VB.

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