Figure 1: Antiferromagnetic microelectronic memory device.
From: Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility
(a) Scanning transmission electron microscopy image in the [100]–[001] plane of the CuMnAs epilayer grown on a GaP substrate. (b) Optical microscopy image of the device containing Au contact pads (light) and the AF CuMnAs cross-shape bit cell on the GaP substrate (dark). Scale bar length is 2 μm. (c) Picture of the PCB with the chip containing the AF bit cell and the input write-pulse signals (red dots) and output readout signals (blue dots) sent via a USB computer interface.
