Figure 3: Antiferromagnetic memory-counter characteristics. | Nature Communications

Figure 3: Antiferromagnetic memory-counter characteristics.

From: Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Figure 3

(a) Readout signal as a function of the number of pulses in the train of pulses, for different values of the individual pulse length and a common duty cycle of 0.025. All data points are obtained starting from the same reference state. The writing current density is 2.7 × 107 A cm−2. Plotted data points are the average over ten measurements; error bars represent the standard deviation. (b) Same as a for different duty cycles (corresponding to different delays between individual pulses) and for a common individual pulse length of 200 μs. (c) Same as a measured as a function of the integrated pulse time and plotted for different individual pulse lengths. (d) Same as c plotted for different number of pulses in the pulse train. The lines connecting the data points are a guide to the eye. All measurements were performed at room temperature.

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