Figure 1: Temperature dependence of resistivity in bandwidth-controlled R₂Ir₂O₇.

Schematic magnetic configuration for (a) all-in all-out state, (b) 2-in 2-out state and (c) 3-in 1-out state, respectively. Temperature dependence of resistivity for R=Nd (x=0) at (d) 0 GPa, (e) 1.0 GPa, (f) 1.4 GPa, (g) 1.8 GPa, (h) 2.2 GPa and (i) x=0.5 for R=Nd_1−xPr_x (effectively 3.3 GPa), respectively. The black curves denote the resistivity of trained state which was measured on elevating temperature process at 0 T after magnetic field cooling of 14 T along [111] crystallographic direction, to eliminate the contribution from the metallic magnetic domain walls. The blue lines denote the resistivity under a magnetic field of 14 T applied parallel to [111] direction and the red ones are for a field along [001] direction. (j) Metal-insulator transition temperature as a function of pressure (bottom axis) and Pr concentration x (top axis). Δx=0.1 corresponds to ΔP=0.65 GPa. The circles denote the transition temperature for x=0, the triangles are that for x=0.5 and the square is that for x=1.