Figure 3: Dependency of the effect on the back-gate voltage.
From: Towards colloidal spintronics through Rashba spin-orbit interaction in lead sulphide nanosheets
(a) Dependence of different components of the photocurrent on the gate voltage. Similar gate dependencies can be observed for J0, JLPGE and JCPGE (background current, linear photo-galvanic effect and circular photo-galvanic effect). (b) The measured CPGE current and its normalized value as a function of back-gate voltages for an 18 nm thick sheet. (c) Calculated (DFT) valence and conduction bands at the M point with application of different external electric fields—modelling the gate (15 layers). Σ denotes the path from Γ to M. The red and the blue colours denote the sign of the spin projection on the in-plane axis perpendicular to the Γ–M path (<Si⊥Σ>).The valence-band maximum was set to 0 eV.
