Figure 3: Injection and polarization in organic ferroelectric memory diodes.
From: Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
(a) Hole density distribution within the PFO at the interface-contact corner, V=20 V. (b) Measured (symbols) and simulated (lines) I–V characteristics at ambient temperature. The blue line is calculated by switching off the tunnelling. (c) Tunnelling rate within the PFO pillar at the interface-contact corner, V=20 V. (d) I–V characteristics calculated by varying the contact barrier and the ferroelectric properties. (e) I–V characteristics calculated accounting for the 2D polarization (Px+Py, red line) and only y-component Py (blue line). (f) On/off current ratio as a function of injection barrier. Symbols correspond to experimental data taken from ref. 6, while the red crosses are the result of the simulations, and are obtained at Fy=2 × 105 V cm−1. The dashed line is the least-square approximation of the data taken from ref. 6. The slope is 0.25 eV dec−1.
