Figure 4: Scaling of organic ferroelectric memory diodes.
From: Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
(a) Hole concentration in the PFO pillar with lateral dimension W=WPFO+WP(VDF-TrFE) , where WPFO=5 nm and WP(VDF-TrFE)=200 nm, biased at 5 V. (b) Comparison between the calculated I–V characteristics as a function of the P(VDF-TrFE) lateral dimension (WP(VDF-TrFE)) with WPFO=5 nm.
