Figure 3: Construction and electrical properties of MoS2 homojunction. | Nature Communications

Figure 3: Construction and electrical properties of MoS2 homojunction.

From: Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

Figure 3

(a) OM image of the device A2. PEDOT:PSS electrodes 1–2 define an self-healed MoS2 FET, 3–4 define an as-grown MoS2 FET, and 2–3 define the homojunction device A2. Scale bar, 5 μm. (b) Output characteristic on linear/logarithmic scale (black/blue) of the device A2. (c) Output characteristic of the homojunction under a series of temperatures. Inset: linear fitting result of the relationship between ln(IDS/T3/2) and e/(kBT). The red line fit is drawn to yield the Schottky barrier height. (d,e) Secondary-edge and valence-band spectrum of the ultraviolet photoelectron spectroscopy (UPS) measurement from as-grown and self-healed monolayer MoS2. (f) Band diagram of the monolayer MoS2 homojunction obtained from UPS measurements. (g,h) Output characteristics and transfer characteristics of a monolayer MoS2 transistor both before and after PSS-induced SVSH. (i) Ion/Ioff ratio of the homojunction measured during 60 days of storage under ambient conditions.

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