Figure 2: Ballistic transport at zero magnetic field.
From: Ballistic superconductivity in semiconductor nanowires
(a) Differential conductance, dI/dV, as a function of bias voltage, V, and gate voltage, Vgate for device B. (b) Vertical line cut from a in tunnelling regime (green trace, gate voltage=−12 V). (c) Vertical line cut from a on the conductance plateau (blue trace, gate voltage=−5.9 V). (d) Horizontal line cuts from a showing above-gap (Gn, black, |V|=2 mV) and subgap (Gs, red, V=0 mV) conductance. (e) Above-gap (black) and subgap (red) conductance for device C, where Gs enhancement reaches 1.9 × 2e2/h.
