Figure 1: Experimental set-up. | Nature Communications

Figure 1: Experimental set-up.

From: Observation of the inverse spin Hall effect in silicon

Figure 1

(a) A schematic illustration of the Ni81Fe19/p-Si film used in this study. H represents an external magnetic field. (b) Current-voltage (I–V) characteristic measured for the Ni81Fe19/p-Si film, where the two electrodes are attached to the AuPd layers. wF is the length of the Ni81Fe19 layer. (c) I–V characteristic measured for the Ni81Fe19/p-Si film. The two electrodes are attached to the Ni81Fe19 layer and AuPd layer, respectively.

Back to article page