Figure 4: Activation energies of dielectric relaxation processes in phase-separated manganites.

(a) Temperature dependence of relaxation time τ for PCMO (black) and PCSMO (red). The red curves with squares, circles and triangles present data for τ₁, τ₂ and τ₃ of PCSMO, respectively. The inset shows Arrhenius plot of relaxation times. The solid lines in inset figure are fitting results based on Arrhenius law. The deduced activation energies for relaxation τ, τ₁, τ₂ and τ₃ are 150, 160, 120 and 50 meV, respectively. The blue dotted line is fitting result for τ₃ based on the combined equation τ⁻¹=τ_T⁻¹+τ₀⁻¹exp(−E_a/k_BT). (b) Temperature dependence of magnetization for PCMO (black) and PCSMO (red) films measured under μì₀H=0.05 T. Arrows indicate the temperature scan directions. The insets schematically represent the coexistence of multiple phases in PCSMO sample. The solid ellipses and vertically patterned rings stand for ferromagnetic metal (FM) domains and interfaces between FM and charge-ordered insulator (COI) domains, respectively.