Figure 1: Spin orientation of photoexcited carriers by FM layer.
From: Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid
(a) Scheme of structures. (b) Spectra of photoluminescence (PL) intensity (black curve) and polarization (red points) for '10 nm' sample under linearly polarized excitation with photon energy 1.92 eV and power 2 mW. (c) Polarization hysteresis loop ρc(B) in Faraday geometry in '10 nm' sample for the transition e–hh; Bc is the coercive force; A≡ρc(80 mT). (d) Dependence of amplitude A (squares) and PL intensity (triangles) on the spacer thickness. Temperature T=2 K.
