Figure 4: Charge transport properties of the multilayer MoS2 channel.
From: High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
(a) Measured temperature-dependent field-effect mobility of MoS2 TFTs. The open circles are data measured in this work, and the filled circles are data from ref. 3. From the theoretical transport model, the electron mobility (dashed line) is limited by impurity scattering (red line) at low temperatures. At room temperature, the mobility is limited by the combined effect of the homopolar (out-of-plane) phonon (green line) and the polar-optical phonon (blue) scattering. Details of these scattering mechanisms are described in the Supplementary methods. (b) The hexagonal Brillioun zone of multilayer MoS2 with the high symmetry points and six equivalent conduction valleys. (c) An equivalent circuit model for the MoS2 TFT including the effect of the contact resistance Rc.
