Figure 4: Quantized conductance plateaus.
From: Spin–orbit induced electronic spin separation in semiconductor nanostructures
The dependence of the QPC conductance G on the side-gate voltage VSG for different top-gate voltages VTG with different channel widths: 450 (device A) and 360 nm (device C). (a) VTG=+5.8 (red line) and +2.4 V (blue line) for QPC device A, and (b) VTG=+1.7 (red line) and +0.3 V (blue line) for QPC device C at Bex=0 T and T=3.6 K. (c) Asymmetric VSG dependence on G at VTG=+2.4 V for QPC device A. The difference between VSGL and VSGR is defined as ΔVas=VSGL−VSGR. ΔVas is kept constant during the sweeps of VSGL and VSGR. (d) Temperature dependence of the conductance plateau at T=0.22–16 K at Bex=0 T and VTG=+0.3 V for QPC device C.
