Figure 1: Schematics and I–V characteristics of electrochemically gated P3HT transistors. | Nature Communications

Figure 1: Schematics and I–V characteristics of electrochemically gated P3HT transistors.

From: Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors

Figure 1

(a) Schematic of the van der Pauw geometry device structure (channel size is 500 μm × 500 μm). An optical image of an actual device is shown in Supplementary Fig. S1. (b) Schematic of charge injection into the polymer semiconductor. The top layer (black) is the gate electrode, the middle layer (grey) is the ion gel and the bottom layer (maroon) is the polymer semiconductor. Simple ‘+’ and ‘−’ symbols are used for electronic charge carriers, and blue and red symbols are used for ions. The chemical structures of EMIM+ and TFSI− are shown on the right. (c) Drain current (Id) versus gate voltage (VG) at 280 K measured 1 week apart for 5 consecutive weeks. VG was swept at 50 mV s−1. The inset shows the chemical structure of P3HT. (d) Gate voltage (VG) dependence of the hole density (p). The right axis shows the conversion to holes per thiophene ring. The inset shows accumulated charge (Q, integrated from the gate current) versus time. The top (red), middle (green) and bottom (blue) curves are for −1.00, −0.65 and −0.30 V, respectively.

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